| 摘要 |
PURPOSE:To shorten a plasma generating time by mounting a discharge electrode with a high frequency as a power source in a chamber, and placing a workpiece, such as a wafer on the upper surface of the electrode. CONSTITUTION:Argon gas inlet hole 1a and exhaust hole 1b are formed in a box-like etching chamber 1. An elevationally movable rod 2 is inserted to a hole 1c opened at the bottom of the chamber 1. An insulator 3 is inserted to the inserted hole. A discharge electrode 4 for generating plasma gas is provided at the end of the rod 2, and a tray 5 is placed thereon. A wafer 6 is contained as a workpiece in the tray 5. Two parallel discharge electrodes 8, 8 connected at one ends to an AC high voltage 7, and introduced at the other ends into the chamber 1 are attached to the sidewall of the chamber 1 to form a glow starter 9. An AC high voltage is applied to the electrodes 8, 8 to generate a large electric field between the electrodes 8 and 8 to excite gas molecules in the chamber 1, thereby effectively discharging from the electrode 4 even in a high vacuum state in which collision frequency of the molecules is normally less.
|
