发明名称 LEAD FRAME FOR IC
摘要 PURPOSE:To manufacture a lead frame for an IC having high adhesion with low melting point glass by forming the oxide film of an Fe-Ni alloy consisting of Fe3O4, Fe2O3 and NiO onto the surface of an Fe-Ni alloy blank in a section not coated with an Al layer at a specific volume ratio. CONSTITUTION:It is preferable that Al to be coated is cold-rolled so as to acquire the degree of working of 20% or more in order to obtain the sufficient adhesion of a blank substrate 18 and an Al layer 12. The blank substrate 18 is punched and machined to the pattern of a desired lead frame. A plurality of heat treatment is executed to the lead frame 11 punched to the pattern, and the oxide film of an Fe-Ni alloy is formed onto the surface of an Fe-Ni alloy blank in the lead frame 11. The oxide is shaped so as to keep the relationship of the volume of Fe3O4>the volume of Fe2O3>the volume of NiO at a volumetric ratio.
申请公布号 JPS63136553(A) 申请公布日期 1988.06.08
申请号 JP19860280870 申请日期 1986.11.27
申请人 SUMITOMO ELECTRIC IND LTD 发明人 YAMAZAKI KAZUO;IGARASHI TADASHI
分类号 H01L23/50 主分类号 H01L23/50
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