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发明名称
EEPROM MEMORY CELL WITH SINGLE POLYCRYSTALLINE SILICON LAYER TUNNEL OXIDE REGION
摘要
申请公布号
JPS63136573(A)
申请公布日期
1988.06.08
申请号
JP19870288600
申请日期
1987.11.17
申请人
SGS MICROELETTRONICA SPA
发明人
KARURO RIIBA
分类号
H01L21/8247;H01L29/788;H01L29/792
主分类号
H01L21/8247
代理机构
代理人
主权项
地址
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