发明名称 FORMATION OF INSULATING FILM ON ALUMINUM ALLOY
摘要 PURPOSE:To economically form an insulating film having superior heat conductivity, insulation and heat resistance on an Al alloy having a specified compsn. consisting of Si and Al by anodically oxidizing the surface of the Al alloy to form an Al2O3 film and coating the film with ceramics. CONSTITUTION:The surface of an Al alloy consisting of 30-60wt% Si and the balance essentially Al is anodically oxidized to form an Al2O3 film. The Al alloy is preferably manufactured by powder metallurgical processing. The pref. grain size of the Si grains in the Al alloy is <=5mum. The Al2O3 film is then coated with ceramics selected among Al2O3, AlN, SiC and BN. Thus, an insulating film having low thermal expandability, high heat conductivity, superior adhesion, insulation and heat resistance is obtd.
申请公布号 JPS63134694(A) 申请公布日期 1988.06.07
申请号 JP19860279361 申请日期 1986.11.22
申请人 SUMITOMO ELECTRIC IND LTD 发明人 ITO YOSHIAKI;TAKEDA YOSHINOBU
分类号 C25D11/04;C23C28/04;C25D11/18;H01L23/14;H05K3/44 主分类号 C25D11/04
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