发明名称 |
FORMING DEVICE FOR CVD THIN FILM |
摘要 |
PURPOSE:To prevent fine particles of a foreign material from being flung up and blown off at a time for carrying in a wafer and carrying out it by opening and closing a bell jar without providing a gate part to a forming device for a thin film. CONSTITUTION:The buffer 2 of a reaction furnace is covered with a bell jar and a wafer placing base 4 is provided around the buffer 2. The bell jar is constituted so that it can be opened and closed with an opening and closing mechanism 11 such as a hinge member in the outer peripheral end of the upper part of the reaction furnace main body 20. Clean air is blown thereinto as shown with arrows by opening the bell jar and discharged to the outside of the furnace together with a foreign material floated in the furnace. A wafer 6 is held up by raising a projection pin 22 and transferred to a wafer carrying means 7 to discharge the wafer 6 to the outside of the furnace. Then the nontreated wafer 6 is carried to the upper part of the placing base 4 with the carrying means 7 and transferred on the projection pin 22 and placed on the placing base 4 by lowering the pin 22. Then the bell jar is closed and reaction treatment for film-forming a CVD thin film is started.
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申请公布号 |
JPS63134664(A) |
申请公布日期 |
1988.06.07 |
申请号 |
JP19860281558 |
申请日期 |
1986.11.26 |
申请人 |
HITACHI ELECTRONICS ENG CO LTD |
发明人 |
OYAMA KATSUMI;HIKIMA HITOSHI |
分类号 |
H01L21/31;C23C16/44;H01L21/205 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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