发明名称 |
Offset floating gate EPROM memory cell |
摘要 |
An electrically programmable read only memory device formed in a face of a semiconductor substrate of a first conductivity type which includes a pair of spaced apart thick oxide isolation regions defining an elongated channel of the substrate therebetween. A floating gate of conductive material overlies a portion of one of the isolation regions and a first portion of the elongated channel being separated from the oxide isolation and channel regions by an insulator layer. A control layer of conductive material extends over the channel and the floating gate separated from both of the latter by an insulator layer. Buried diffused regions are located below each oxide isolation region.
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申请公布号 |
US4750024(A) |
申请公布日期 |
1988.06.07 |
申请号 |
US19860830160 |
申请日期 |
1986.02.18 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SCHRECK, JOHN F. |
分类号 |
H01L21/8247;H01L21/762;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L29/78;G11C11/40;H01L27/02;H01L29/04 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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