| 摘要 |
PURPOSE:To obtain a good growth layer of a compound semiconductor, especially III-V group compound semiconductor, by forming a rectifier provided in a reaction tube into a rectangle shape having section which becomes narrow as a feed inlet is brought close in the part near a gas feed inlet. CONSTITUTION:In a vapor growing device in which a reactive gas is introduced into a tubular reaction tube and a crystal growth of a semiconductor is carried out on a susceptor, a rectifier beyond the susceptor from a gas feed inlet as a passage of the reactive gas in the reaction tube is provided and the rectifier is formed into a rectangle shape having section become narrow as a feed inlet get close in a part near a gas feed inlet and upper planar face of the susceptor is arranged on the face of the extension face of inner bottom face of the recti fier tube. According to the device, gas flow exhibiting laminar air flow free from gas vortex formation is obtained by improvement of gas flow rate by decrease of section area of gas flow route and shape of the rectifier. Consequent ly growth layer of III-V compound semiconductor having highly uniform growth layer in large area and hetero joining having steep change over of the composi tion can be obtained by above-mentioned device.
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