| 发明名称 |
Integrated circuit manufacturing process |
| 摘要 |
A process is disclosed for manufacturing an integrated circuit in which multiple patterned layers of thin film materials are provided on a silicon wafer. The wafer is conditioned between the providing of layers, after each etching step, by rinsing the item with a purified water solution containing at least 0.01 ppm ozone, preferably between 0.02 and 0.09 ppm ozone.
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| 申请公布号 |
US4749640(A) |
申请公布日期 |
1988.06.07 |
| 申请号 |
US19860903022 |
申请日期 |
1986.09.02 |
| 申请人 |
MONSANTO COMPANY;ARROWHEAD INDUSTRIAL WATER, INC. |
发明人 |
TREMONT, PETER L.;ACKERMANN, ARTHUR J. |
| 分类号 |
H01L21/02;H01L21/306;H01L21/311;H01L21/316;H01L21/321;H01L21/762;(IPC1-7):G03C5/00 |
主分类号 |
H01L21/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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