CONTACT ARRANGEMENT FOR EMITTER ZONE OF SEMICONDUCTOR DEVICE

摘要

The emitter zone of a transistor has a p-n junction which limits the surface thereof and an edge formed by the p-n junction between the emitter and base zones. A contact arrangement comprises contact material provided on only part of the surface area of the emitter zone so that the surface area of the emitter zone in the vicinity of the emitter edge is free of contact material. Insulating material covers the surface area of the emitter zone which is free of contact material. The contact material covers at least part of the insulating material.