| 摘要 |
<p>PURPOSE:To prevent whiskers from emerging in a film carrier lead and thereby to improve on semiconductor device reliability by a method wherein an Sn plate layer and then a thinner Pb plate layer are formed on a desired pattern of semiconductor film attached to a flexible insulating film and the thicknesses of the plate layers are so designed as to respectively fall only in prescribed ranges. CONSTITUTION:In a film carrier 1, a lead 5 that is a conductive film patterned as desired is attached to a film 2 built of such a flexible, insulating material as flexible epoxy resin or paper. In the lead 5, an Sn plate layer 9 for an Au-Sn eutectic junction with an Au bump 13 on an electrode 12 of an IC chip 11 is formed on a copper foil B attached to the film 2 and, further, a thinner Pb plate layer 10 is formed. The Sn plate layer 9 should preferably be 0.3-0.8mum- thick, and the Pb plate layer 10 should preferably be one tenth in thickness of the Sn plate layer 9. This design prevents whisker-caused short-circuiting between neighboring leads.</p> |
