| 摘要 |
PURPOSE:To uniformly diffuse and supply a precess gas into a plasma generation chamber and to upgrade utility efficiency for this gas, by installing a process gas buffer chamber around microwave introduction ports which are opened inside a plasma generation chamber. CONSTITUTION:This plasma process device is equipped with the following chambers: a plasma generation chamber 1 in which plasma is generated by utilizing microwaves to perform electronic cyclotron resonance, and a reaction chamber 3 equipped with a mounting board 5 for a sample S on which the generated plasma is to be projected. In this plasma process device, a buffer chamber 6 for the supply of a process gas into the plasma generation chamber 1 is installed around microwave introduction ports 6b and 6c which are opened inside the plasma generation chamber 1. The buffer chamber 6, for example, is formed in a ring shape to surround a microwave introduction port 1c, and a partition of an iron shield 6a with many holes serving as gas introduction ports is formed between the buffer chamber 6 and the plasma generation chamber 1 and in this chamber 6, porous materials 6d which compose a means of uniformly diffusing supplied gases are disposed between the gas supplying tubes 6b, 6c and the iron net 6a.
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