| 摘要 |
PURPOSE:To lower a collector saturation voltage, to increase breakdown strength and to increase a maximum collector current in a low-current area by a method wherein an N-type buried layer and an N<+> type buried layer are formed, a P-type diffused layer is diffused into an epitaxial growth layer, a P<+> type diffused layer is diffused into the P-type diffused layer so as to make it a base, and so on. CONSTITUTION:An N-type buried layer 1 and an N<+> type buried layer 2 are formed; a P-type diffused layer 7 is diffused into an epitaxial growth layer 6; a P<+> type diffused layer 4 is diffused into the P-type diffused layer 7 so as to make it a base. In addition, an N<+> type diffused layer 5 is diffused into said epitaxial growth layer 6 so as to make it a collector; in addition, the N<+> type diffused layer 5 is diffused into said P<+> type diffused layer 4 so as to make it an emitter. Through this constitution, because there exists no epitaxial growth layer 6 directly under the base of the P<+> type diffused layer 4, a collector saturation voltage in a low-current region is lowered. Because a depletion layer is easy to expand in the P<+> type diffused layer 4, breakdown strength is increased. In addition, a maximum collector current is increased.
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