| 摘要 |
PURPOSE:To contrive the removal of an unnecessary resist to give bad effect in the manufacture of a semiconductor element by a method wherein the part of the resist turning around to the side part of a substrate, the peripheral part of its surface and its rear is previously subjected to nondevelopment optical etching by laser light at a prealignment part. CONSTITUTION:A semiconductor substrate 6 is supported on a chuck 7, a pair of rollers 8 for prealignment are pressed to the substrate from the lateral directions thereof, the positional relation of the substrate 6 is adjusted in such a way as to be within a constant reference and after the wafer is vacuum-sucked, a motor 9 is driven and the prealignment in the direction of rotation of the substrate 6 is performed. Then, laser light is irradiated on the creeping parts of a resist on the peripheral part of the surface of the substrate 6, its side surface parts and the peripheral part of its rear from a pair of laser projectors 10 capable of moving in parallel in opposition to each other in such a way as to pinch the peripheral parts of the substrate 6 between them. The light sources of the laser projectors 10 are laser light, which is generated by an excimer laser source 11, and the laser light is transmitted to the laser projectors 10 through optical fibers 12. Hereby, the reduction in an etching resistance due to the scattering of a resist solvent and the reduction in a pattern processing precision at the solvent scattering parts can be dissolved.
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