| 摘要 |
PURPOSE:To protect a protective film and aluminum electrodes on the surface of a wafer from being etched when an oxide film on the ground back surface of the wafer is removed by a method wherein, after the back surface of the wafer is ground, the oxide film on the ground surface is removed with a sheet stuck to the wafer surface and a metal film is evaporated on the ground surface. CONSTITUTION:A process 2 in which a sheet is stuck to the surface of a semiconductor wafer 1 whose surface processing is finished, a process 3 in which the back surface of the wafer 1 is ground, a process 6 in which the sheet stuck to the surface of the wafer 1 is removed, a process 4 in which an oxide film on the ground surface is removed and a process 5 in which a metal film is evaporated on the ground surface are provided. In the manufacture of a semiconductor device like this, after the back surface of the wafer 1 is ground, the oxide film on the ground surface is removed with the sheet stuck to the surface of the wafer 1 and, after the metal film is evaporated on the ground surface, the sheet on the surface of the wafer 1 is removed. With this constitution, as the surface of the wafer is kept covered with the sheet when the oxide film on the ground surface is removed, a protective film and aluminum electrodes can be prevented from etch so that manufacture of a semiconductor device of a high reliability can be realized.
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