| 摘要 |
PURPOSE:To perform an excellent exposure even when there exists a rotational deflection present on an optical image by a method wherein, when a material to be exposed whereon a mask pattern is be transferred is placed on a stage is exposed on a two- dimensional movable stage, a local part of the optical image of the pattern is detected by a microscopic aperture part, the surface of which is aligned with the material to be exposed, and the stage is controlled by the result of said detection. CONSTITUTION:The light outputted from an illumination light source 1 to be used for exposure is focussed by the first condenser lens 2, is made incident on the second condenser lens 3 through a shutter 4a, and the light emitted from the lens 3 is made to be incident on the test reticle 5 supported by a holder 15. At this point, light-transmissing marks RR and RL and provided on the reticle, and they are controlled by the light- shielding materials 4b and 4c which are provided on the lens 3. Then, the beam of light passed through a mark is projected on the microscopic aperture member 8, having the surface aligned with the semiconductor wafer 10 by a gap sensor 12 using a projection lens 6, while this light is converted into an electric signal using a photoelectric detector 9, and the stage 7 mounting the wafer 10 thereon is controlled. |
