| 摘要 |
PURPOSE:To improve the efficiency of a hydrogeneration process to a dangling bond located inside a polycrystalline silicon thin-film forming an active layer by a method wherein the film thickness of a gate electrode is decided in such a way that the localized level density per unit of the polycrystalline silicon thin-film is set to be less than 1X10<14> pieces/cm<2>. CONSTITUTION:After a polycrystalline silicon thin-film 12 has been evaporated on a Pyrex glass substrate 11 by a vacuum evaporation method and has been patterned, an active layer part is formed. Then, a silicon oxide film 13 acting as a gate insulating film is deposited by an atmospheric pressure CVD method; the assembly is annealed in an atmosphere of oxygen so that the silicon oxide film 13 can be formed closely. Then, after the polycrystalline silicon thin-film acting as a gate electrode 14 has been deposited in such a way that the film thickness is set to reduce the localized level density per unit area to less than 1X10<14> pieces/cm<2>, e.g., 1500 Angstrom , the gate electrode 14 is formed by photolithography. Then, after a silicon oxide film 15 has been deposited by the atmospheric pressure CVD method until its film thickness becomes 500 Angstrom , ions of boron at 3X10<15> pieces/cm<2> are injected by 30 KeV. |
