发明名称 OPTICALLY ERASABLE SEMICONDUCTOR STORAGE DEVICE
摘要 PURPOSE:To lower the heat-treatment temperature required during a production process and to limit the use of an expensive construction material to a light-transmitting window plate by a method wherein the light-transmitting window plate composed of quartz or hard glass is installed directly above an optically erasable semiconductor memory chip of an assembled structure and the light-transmitting window plate is exposed and is then sealed by a resin material. CONSTITUTION:An optically erasable semiconductor memory chip 3 is fixed to a substrate-supporting part 1 of a lead frame; a light-transmitting window plate 7 composed of quartz or hard glass is installed directly above said optically erasable semiconductor memory chip 3 at an assembled structure where electrodes on the memory chip 3 and inner leads 2 are connected by metal thin wires 4; then, this assembly is sealed with a resin material 10 in such a way that said light-transmitting window plate 7 is exposed. For example, a transparent resin layer 8 composed of a gel-like silicon material or the like is laid between the optically erasable semiconductor memory chip 3 and the light-transmitting window plate 7. In addition, a groove 11 is made around the light-transmitting window plate 7 during a sealing and molding process; an epoxy resin material 12 is buried into the groove 11 after the molding process and is then set at a temperature of 150-200 deg.C.
申请公布号 JPS63133654(A) 申请公布日期 1988.06.06
申请号 JP19860282428 申请日期 1986.11.26
申请人 MATSUSHITA ELECTRONICS CORP 发明人 NOSE KOJI
分类号 H01L21/8247;H01L23/28;H01L29/78;H01L29/788;H01L29/792 主分类号 H01L21/8247
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