| 摘要 |
PURPOSE:To contrive to enhance quality of electrode wiring and a semiconductor device by checking generation of disconnection at step difference parts by a method wherein a metal material is buried flat in minute contact holes having different depths and having a high aspect ratio to form electrode wiring. CONSTITUTION:After a semiconductor element is formed in a substrate 1, an interlayer insulating film 7 is formed, and minute contact holes 9, 10 having a high aspect ratio and having different depths are formed at the prescribed positions of the interlayer insulating film 7 for performance of interlayer wiring between source and drain regions 5, 6 and a first layer metal wiring 8. Then distributing wires 11, 12 are formed selectively in the contact holes 9, 10 using a high melting point metal material according to the selective growth method. Then as a metal material 13, WSix is coated thereon, and moreover an organic coating film 14 is formed on the whole purface. The organic coating film 14, the WSix film 13 and the wire 12 are removed according to the same speed etching condition of the three parties. After then, the remaining organic coating film is completely removed, a WSix film 17 is adhered to be formed again, and the prescribed electrode wiring is formed.
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