| 摘要 |
PURPOSE:To realize the expansion of the area for a Schottky junction without expanding the area occupied by a device by a method wherein, after a recessed part has been formed by selectively etching a semiconductor substrate 1 of one conductivity type, the Schottky junction is formed at the bottom and on the sidewall of the recessed part. CONSTITUTION:An insulating film 2 if formed on a semiconductor substrate 1 of one conductivity type; an opening is made selectively on the insulating film 2; the semiconductor substrate 1 inside the opening is etched in a self- aligned manner. After that, a Schottky junction is formed inside said etched part. For example, the silicon oxide film 2 is formed on the silicon substrate 1 of an n-conductivity type; the silicon oxide film 2 is etched selectively by using a resist pattern; an opening is made; the substrate 1 is exposed. Then, the substrate 1 inside the opening is etched in a self-aligned manner by making use of the silicon oxide film 2 as a mask. Then, a metal, such as platinum or the like, for formation of the Schottky junction is sputter-evaporated; the assembly is annealed in a vacuum at about 500 deg.C; a silicide layer 3 is formed not only at the bottom but also on the sidewall of the etched part. Then, conductor wiring parts 4, 5 are formed. |
