| 摘要 |
PURPOSE:To easily improve resolution and a contrast of a single layer resist and to enable a fine resist pattern to be stably formed with high reproducibility, by coating a semiconductor substrate's main surface with a photoresist and irradiating the whole surface with far ultraviolet rays while performing heat treatment for the substrate and next performing usual exposure and developing processes. CONSTITUTION:A semiconductor substrate 1's main surface is coated with a photoresist 2, and the whole surface is irradiated with far ultraviolet rays while performing heat treatment for the substrate, and next usual exposure and developing processes are performed. For example, a posi type photoresist 2 is formed 1 mum in thickness on a silicon substrate 1 by a rotary coating method, and baking at 100 deg.C for 60 sec. is performed by a hot plate 3, and next far ultraviolet-ray irradiation for the substrate is performed for 2 to 5 sec. while a temperature of the substrate is kept 100 deg.C. Thereafter, exposure is performed through a reticle mask by the use of a stepper of 436 nm in exposure wavelength, and a developing liquid is used to perform development, and next post baking at 120 deg.C for 90 sec. is performed to obtain a resist pattern. Hence, side walls of the formed resist pattern become steep, and so a contrast and resolution can be improved. |
