| 摘要 |
PURPOSE:To prevent a gate electrode and a source-drain electrode from being short- circuited by a method wherein, after a first insulator layer has been formed on the gate electrode, the gate electrode exposed due to pinholes, foreign matter, protrusions or the like is removed by etching so that the occurrence of a defect due to an imperfectly formed film and the occurrence of the defect caused by the contamination of the substrate and by a protrusion can be eliminated. CONSTITUTION:A first insulator layer 3 is formed on a substrate 1, where a gate electrode 2 is formed, by a plasma CVD method or the like; the gate electrode exposed due to pinholes, foreign matter, protrusions or the like is removed by etching by making use of the insulator film 3 as a mask. After that, a second insulator layer 3', an amorphous semiconductor layer 4 and a protective insulator layer 5 are formed in succession; a source-drain contact hole leading to the semiconductor layer 4 is made; a source-drain electrode 6 is formed. For example, after the gate electrode 2 composed of Cr has been formed on a glass substrate 1 and a silicon nitride film as the first gate insulating film 3 is formed on the electrode, the assembly is immersed in an etching solution of Cr, and the Cr exposed due to the pinholes or the protrusions is over-etched. After that, the silicon nitride film as the second gate insulating film 3' and so on are formed. |
