| 摘要 |
PURPOSE:To realize high density integration, by forming a bipolar device right above a plane region on which a MOS device is formed, and directly joining the emitter of the bipolar part and the gate of the MOS part. CONSTITUTION:On a semiconductor substrate 11, a MOS transistor is formed which is composed of P<+> diffusion layers 12 and 13, a gate oxide film 15 and a date electrode 16. On this MOS transistor, a bipolar transistor composed of an N<+> emitter region 19, a base region 110, a P<+> base contact region 111, a collector region 112, etc., is formed via an interlayer insulating film 17. The gate electrode 16 of the MOS transistor and the emitter region 19 of the bipolar transistor are directly connected. By such a constitution, high density integration can be attained. Further, as the emitter electrode and the gate electrode are constituted as the same electrode, wiring resistance and wiring capacity can be made small. |
