| 摘要 |
PURPOSE:To shorten a screen time and to cut down the cost of equipment by a method wherein a semiconductor device wafer is electrified and an oxide film having a fine defect is screened in the case of discharge of the electrification to a substrate. CONSTITUTION:A voltage is applied to a conductive plate 4 by a high voltage power source 5 in a state that a switch 6 is opened and a switch 7 is shut. When the voltage is applied to the conductive plate 4, an over coat 2 is electrified to the earth. When the switch 7 is opened and the switch 6 is shut, the charge electrified in a semiconductor device wafer 1 is discharged to the earth through a conductive plate 3. If the voltage to be applied to the conductive plate 4 is properly adjusted, a proper electric field is applied to an oxide film, the oxide film only having a low breakdown strength and a fine defect is destroyed and an effective screen becomes possible. Hereby, the screen time is shortened and the cost of equipment is cut down.
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