| 摘要 |
PURPOSE:To detect a defect of the surface of a dielectric by a method wherein, after a charge is adhered to the surface of a dielectric material, a carbon- containing indicator is adhered to the material and a taurus or an omega is formed. CONSTITUTION:Si dioxide located at the edge of a dielectric material (wafer) 200 is polished off in order to make a uniform positive charge adhere to the surface of the dielectric 200 to be tested and a silver paint is applied there. Then, the wafer is cooled under an environment of dried nitrogen is an ionizing unit 100 after being heated and its water content is removed. Then, for adhering the uniform charge to the surface of the wafer 200, the surface of the wafer 200 is bombarded using ionized gas by means of an anode 130, a cathode 150 and a double convergent lattice 140 in the ionizing unit 100. By depositing a carbon-containing indicator on the wafer 200, the carbon adheres to a part where a defect exists and a taurus or an omega is formed. These states are decided and the defect of the wafer is detected.
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