| 摘要 |
PURPOSE:To enable even etching process extending over whole surface of masks to be performed by a method wherein the masks contained in a cavity of plasma upper member are plasma-etched to arrest the edging effect by etching the masks from the ends. CONSTITUTION:Masks 3 coated with Cr films 6 and spread with resist 7 to be patterned on a quartz 5 are arranged in a cavity of quartz made planar upper member (mask mounting plate) 2. Mixed gas of CCl4 and O2 is previously led into a chamber from a gas leading-in port 9 and then plasma 10 is produced by discharging between opposing electrodes 1, 1' to etch the Cr films 6 on the masks 3. Through these procedures, the edging effect by etching the masks 3 from the ends can be arrested to enable even etching process extending over whole surface of masks 3 to be performed.
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