| 摘要 |
PURPOSE:To obtain a high conversion efficiency by making the thickness of a p-type GaAs layer 0.2-0.3mum at the part opposed to an antireflection film and 0.5-0.8mum at the part opposed to the metallic electrodes, thereby reducing the deterioration due to radiation. CONSTITUTION:On the principal surface of an n-type GaAs substrate of a low specific resistance, an n-type buffer growth layer 2 of a high specific resistance. Further thereon, a p-type AlGaAs growth layer 10 and a pn-junction 8 are formed in the regions where a Si3N4 film 9 is not formed, or the regions where metallic electrodes 6 are to be formed. Then, a p-type AlGaAs growth layer 4 and the pn-junction 8 are formed on the whole substrate surface. At this time, a p-type GaAs growth layer 3 is formed so that the depth of the pn- junction 8 of the region to receive a light becomes 0.2-0.3mum. By two times of formation of the pn-junction 8, the pn-junction 8 of the regions where the metallic electrodes are to be formed is formed 0.5-0.8mum. |
