| 摘要 |
PURPOSE:To reduce cost, and to conform spectral responsivity and a luminous factor by constituting a light-receiving section of both a P-N junction diode and a MOS capacitor. CONSTITUTION:Incident beams are projected simultaneously to a diode consisting of a P-type Si substrate 1 and an N-type diffusion layer and a MOS capacitor 4, and a type that the spectral responsivity of the diode and the capacitor are synthesized is obtained as spectral responsivity as a light-receiving section, thus acquiring spectral responsivity in a type that luminous factors are close. Accordingly, blue sensibility is improved by a P-N junction diode, and the sensibility of a near infrared region is reduced by a poly Si section, thus bringing sensibility as a whole close to the luminous factor. |
