| 摘要 |
PURPOSE:To form an isolation of extremely narrow width by laminating a specific layer on the upper surface of a semiconductor substrate, forming a groove of the width in the same degree as the thickness of an oxide film by an oxide film formed on the side end of the layer in the substrate, and oxidizing the surface of the groove. CONSTITUTION:A silicon oxide film 5 and a nitride film 6 are laminated on a P<-> type semiconductor substrate 4, and a polysilicon layer 7 and a poly oxide film 8 of suitable shapes are deposited thereon. The range of the same degree as the width W of the layer 7 of the film 8 is removed by etching to expose the upper end of the layer 7, the surface of the film 6 is exposed by removing by etching, and the film 8 is retained. A groove 10 of the width in the same degree as the thickness of the film 8 is formed in the substrate by the film 8, and an isolation is formed by oxidizing the surface of the groove 10. Thus, the extremely narrow isolation can be formed.
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