| 摘要 |
PURPOSE:To etch to a desired position with good controllability by retaining a first buried film selectively only on a region having a wide groove width to easily flatten the surface with good distribution. CONSTITUTION:The film thickness of a first insulator 3 is formed substantially equally to a groove depth, the insulator 3 is retained selectively only on an element separating region having a wide groove width. Thus, when a second insulating film 5 is deposited, the element separating region having the wide groove width and the film 5 on the element forming region are substantially equal in height. When fluid substance 6 and the film 6 are etched under the conditions of the same etching speed, the etching area of the film 5 is abruptly reduced. Accordingly, the optical intensity of the specific wavelength is abruptly varied. Thus, the end point of etching can be easily detected to be etched uniformly with good control.
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