| 摘要 |
PURPOSE:To enhance the photoconductivity and film growing velocity and to reduce an optical deterioration of a semiconductor thin film by laminating at least two extrafine films of specific amorphous Si:H in a laminar state. CONSTITUTION:At least two extrafine films of 10-1000Angstrom of amorphous Si:H distributed continuously variably in a film thicknesswise direction in a range of 5-15 atoms-% of hydrogen concentration distribution in an Si are laminated in a laminar state. That is, a film having large photoconductivity and small optical deterioration is formed by utilizing the fact that (SiH) radical amount is relatively larger than (H) radical amount in an initial discharging step. Thus, an a-Si:H film having high photoconductivity (photocurrent), high film forming velocity and less optical deterioration is obtained.
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