| 摘要 |
PURPOSE:To improve reproducibility and reliability by leaving a gate electrode only onto the side wall of a U-shaped trench in a self-alignment manner and forming a drain region and a source region in the self-alignment manner, using the gate electrode as a mask material. CONSTITUTION:An epitaxial layer 12 as a channel is grown onto a substrate 11 and a channel impurity is introduced, and a U-shaped trench is shaped. A field oxide film 13 is formed through a selective oxidation method while a window is bored to an element region and a gate oxide film 14 is shaped. A polycrystalline semiconductor 15 as a gate electrode is deposited and the gate electrode is formed only onto the side wall of the U-shaped trench in a self- alignment manner, and a drain region 16 and a source region 17 are shaped, using the gate electrode 15 as a mask. A passivation film 18 is deposited, contact holes are bored and a drain electrode 16' and a source electrode 17' are formed. Accordingly, the gate oxide film and the gate electrode can be shaped only onto the side wall of the U-shaped trench in the self-alignment manner, thus improving reproducibility and reliability.
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