| 摘要 |
PURPOSE:To flatten an inter-layer insulating film easily and positively by using an insulating film formed through a bias-sputtering method as the inter-layer insulating film as a foundation and shaping an applied baked insulating film onto the insulating film. CONSTITUTION:First wiring layer patterns 2 consisting of aluminum are formed onto a semiconductor substrate 1, and an oxide film 3 is applied through a bias-sputtering method. The film through the bias-sputtering method is applied at that time because the shape of a depositing insulating film is easy to be flattened. S.O.G films 4 through an application baking method are cured after spin coating, and an inter-layer insulating film having the excellent flatness of the surface is acquired. Accordingly, the insulating film is shaped effectively onto the fine and complicate wiring patterns without uselessly narrowing the spaces of the wiring layers, and the films are also applied and baked into recessed sections formed by the wiring patterns of the S.O.G films positively, thus acquiring the inter-layer insulating film having a flat surface.
|
