| 摘要 |
<p>The surface of an insulating film at the gate of an ion-selective field effect transistor (ISFET) (10) is covered with a thin carbon film (4) and the surface of this film is covered further with an electrolytically polymerized 2,6-xylenol film (3). The resulting ISFET exhibits hydrogen ion selectivitly, has small drift but high stability and is hardly responsive to light. If the surface of the 2,6-xylenol polymer film (3) is covered with other ion-selective films or enzyme-active films, the concentrations of various ions and living substrate can be measured.</p> |
