| 摘要 |
<p>An electrically programmable memory matrix comprises a plurality of memory cells of layered amorphous or microcrystalline semiconductor repeatably switchable between high and low conductance states by voltages of alternate polarity. For each cell there is a single row line and a pair of column lines. The matrix comprises write enable means and means for maintaining voltage difference between pairs of column lines below that sufficient to write to a cell in the absence of a write-enable signal.</p> |
