| 摘要 |
PURPOSE:To decrease the number of manufacturing steps of a C-MOSFET, by forming a gate electrode on one surface of an intrinsic semiconductor thin film, and forming source and drain electrodes on the other surface through p-type and n-type semiconductor thin films. CONSTITUTION:A gate electrode 2 is formed on an insulating substrate 1. The surface is covered with an approximately intrinsic semiconductor thin film 4 made of a-Si or Cds, amorphous tellurium or the like through an insulating film 3 such as a silicon oxide film, a silicon nitride film or the like. On the upper parts of the semiconductor film 4 and the gate electrode 2, p-type semiconductor films 51 and 52 and n-type semiconductor films 61 and 62 are formed. Source or drain electrodes are formed with metal electrodes 71-74 on said films. The electrodes 72 and 73 are connected with a lead wire. Thus a C- MOSFET can be formed with a p-type MOSFET among the electrodes 2, 71 and 72 and an n-type MOSFET among the electrodes 2, 73 and 74 in less manufacturing steps.
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