| 摘要 |
PURPOSE:To obtain a CCD where a gap between channels is reduced by a method wherein a channel region, of an opposite conductivity type, formed on the surface of a semiconductor substrate, of one conductivity type, is divided into more than one CCD channel by a trench region, and more than one transfer gate is formed on an insulating film on the surface of the substrate. CONSTITUTION:Ions of phosphorus P are implanted into the whole surface of a substrate 1 through an oxide film 6 which is formed on a P-type silicon semiconductor substrate 1; an N-type channel region 2 is formed. A silicon nitride film 21 and a CVD oxide film 22 are deposited in succession on the oxide film 6; after that, the surface of the substrate 1, where a trench region 3 is to be formed by a photo-etching method, is exposed. In addition, the trench region 3 is formed by an anisotropic etching method by making use of the CVD oxide film 22 as a mask. This trench region is formed by piercing the channel region 2 and divides the channel region 2 into each CCD channel region. A overflow drain region 4 is formed at the bottom of the trench region 3 by ion implantation; the trench region is filled with a semiconductor material layer 5. After a lower-layer gate electrode 8 has been formed and an interlayer insulating film 9 has been deposited, an upper-layer gate electrode 10 is formed.
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