| 摘要 |
PURPOSE:To obtain high quality silicide between high-melting-point metal and silicon without absorption of oxygen, by serially sputtering the high-melting-point metal and the silicon in a similar sputtering device. CONSTITUTION:A silicon oxidizing film 2 is formed on a surface of a semiconductor substrate 1. A desired circuit element such as a MOS transistor is formed in the semiconductor substrate 1, and a silicon oxidizing film 2 is formed of a heat oxidizing film. A polysilicon film 3 is sticked on the silicon oxidizing film 2 formed on the semiconductor substrate 1, and next high-melting-point metal 4 and a silicon layer 5 are serially sticked thereon. The polysilicon film 3 is formed about 4000Angstrom in thickness on the silicon oxidizing film 2 and doped with phosphorus so that its specific resistance is set in R5/20OMEGA/sg Then, titanium Ti is sputtered about 400Angstrom in thickness by the use of a similar sputtering device, and silicon Si is sputtered about 1000Angstrom in thickness while the sputtering device is kept vacuum. A substrate temperature steeply rises by ramp annealing, and a high quality silicide layer 6 with a mirror-polished surface can be obtained between titanium and silicon without penetration of oxygen.
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