| 摘要 |
PURPOSE:To obtain tapered etching where dimensions are stabilized in a mixed state of anisotropic etching and isotropic etching, by forming a reverse tapered mask on a material to be etched and selectively etching the material to be etched by dry etching. CONSTITUTION:Coating of a positive resist is performed, and a pattern is printed by primary exposure, and baking is performed in an ammonia gas, so that a resist on a sensitive region is stabilized. when AL-Si as a material to be etched is etched with BCl3+Cl2 as an etching gas by the use of an reaction in which a part sensitized by the primary exposure remains in a reverse tapered shape, the etching proceeds with its anisotropic component 102 and isotropic component 103, and tapered etching can be obtained so that a dimension of the resist upper part is the same as that of the bottom part. In complete anisotropic etching, a reverse tapered mask is formed and SiO2 as the material to be etched is etched by the use of CHF3+O2 as an etching gas, so that the tapered etching can be obtained according as a shoulder part of the mask is backed.
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