| 摘要 |
PURPOSE:To lower the contact resistance value between a silicon layer and a metal wiring part and to reduce the unevenness of the resistance value by a method wherein insulating layers having an opening at a part on a diffused layer of a first conductivity type include a silicon oxide layer containing an impurity which transforms a conductivity type of a semiconductor into the first conductivity type if the impurity inside the insulating layers is injected into a semiconductor substrate, while a semiconductor layer of the first conductivity type inside the opening comes into contact with the silicon oxide layer. CONSTITUTION:Insulating layers 5, 6 which have an opening at a part on a diffused layer 8, of a first conductivity type (in this case, of N-type), on a semiconductor substrate 1 include a silicon oxide film 6 containing an impurity which transforms a conductivity type of a semiconductor into the first conductivity type if the impurity inside the insulating layers is injected into a semiconductor layer; a semiconductor layer 7, of the first conductivity type, located inside the opening comes into contact with the silicon oxide layer 6. In order to obtain the contact resistance value which is sufficiently low for practical use, it is sufficient to make a structure that the selectively grown silicon layer 7 comes into contact with a BPSG film 6; in addition, it is desirable that the concentration of the impurity inside the selectively grown silicon layer is more than 5X10<18> cm<-3>.
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