| 摘要 |
PURPOSE:To secure endpoint detection and to simplify structure of a chamber, by forming an endpoint detection signal by the use of a change in self-bias which is generated by a plasma potential or a sheath current in a device for plasma etching or reactive ion etching. CONSTITUTION:When etching of an oxidizing film is performed in a RIE device, self-bias occurs at the start of etching and changes at an endpoint. This change coincides very well with the endpoint in time so that sensitive endpoint detection is possible. This method is effectual for the endpoint detection particularly in the case where the same species of a material not to be etched partially exists under a layer of a material to be etched like at the time of formation of sidetar.
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