发明名称 PRESSURE SENSOR WITH SEMI-CONDUCTOR DIAPHRAGM
摘要 <p>Provided is a pressure sensor of semiconductor type, having a semiconductor diaphragm, wherein the diaphragm comprises at least one of thin wall parts and at least one of thick wall parts, and defines therein recesses formed in the lower surface of the diaphragm below the thin wall parts, piezoresistance elements are laid on the upper surface of the diaphragm near the thin wall parts, and a supporting member is sealingly jointed to the thick wall parts at the lower surface of the diaphragm, so that the recesses are sealed and confined so as to prevent high pressure fluid from blowing off when the thin wall part is broken.</p>
申请公布号 EP0111640(B1) 申请公布日期 1988.06.01
申请号 EP19830109254 申请日期 1983.09.19
申请人 HITACHI, LTD.;HITACHI CONSTRUCTION MACHINERY CO., LTD. 发明人 SHIMADA, SATOSHI;MURAYAMA, KEN;KOBORI, SHIGEYUKI;KAWAKAMI, KANJI
分类号 G01L9/04;G01L9/00;(IPC1-7):G01L9/06 主分类号 G01L9/04
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