| 摘要 |
The packing density of integrated circuits which contain MOS transistors is determined by the size of the MOS transistors. Reduction of the size of MOS transistors encounters problems because the accuracy with which the length of the channel zone (28'', 30'') arranged between source zone (16'', 36'') and drain zone (18'', 38'') can be maintained and which significantly determines the operating parameters of the MOS transistor decreases. A reduction in the size of MOS transistors without loss of manageability of the operating parameters becomes possible by subdividing their channel zone into two areas (28'', 30'') which are separated by a coupling area (20'') of high conductivity. This coupling area (20'') has the same polarity as the source zone (16'', 36'') and the drain zone (18'', 38''). Such a two-channel structure provides for better control of the channel length and is less sensitive to the effect of hot electrons when it is combined with a weakly doped drain section (38''). <IMAGE>
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