| 摘要 |
<p>A method of manufacturing a bonded structure type semiconductor substrate includes: the step of ion-implanting an impurity of a first conductivity type into a first semiconductor substrate (1) of the first conductivity type, thereby to form a first conductivity type ion-implanted layer (2) in a surface region of the first semiconductor substrate (1), the step of causing the first semiconductor substrate (3) to be subjected to a first thermal treatment, and the step of bonding a second semiconductor substrate (3), of a second conductivity type and having a specific resistance of not more than 0.05 OMEGA .cm to a surface (2a) of the ion-implanted layer (2). According to this method, generation of micro voids at an interface can be prevented by performing the thermal treatment.</p> |
