| 摘要 |
PURPOSE:To obtain good photoelectric conversion characteristics and afterimage characteristics without augmenting the size of photoelectric conversion cells by a method wherein a region consisting of a one conductivity type semiconductor for forming a control electrode region and a region, which is provided under the region of an inverse conductivity type semiconductor and consists of a one conductivity type semiconductor, are used as main electrode regions and a transistor, which is controlled by an insulating gate electrode, is formed in a longitudinal direction. CONSTITUTION:An n<+> buried layer 202 and an n<-> collector region 203 are formed on a p-type Si substrate 201. The bipolar transistor of each cell is constituted of a p<-> base region 207 on the n<-> collector region 203 and an n<+> emitter region 208 and a p<+> region 209 to be junctioned to the p<-> base region 207 opposes to a capacitor electrode 206 holding an oxide film 205 between them and constitutes a capacitor Cox for controlling the potential of the p<-> base region 207. Moreover, the n<+> buried layer 202 is not formed in the lower direction of the p<+> region 209, the p<+> region 209 and the p-type substrate 201 are formed at a distance of about 4-5 mum and the source and drain regions of a transistor Qt for refresh are constituted. |
