| 摘要 |
PURPOSE:To obtain the emission spectrum of a purely green color and to enhance the luminosity sharply by installing the following layers: an n-type (or a p-type) AlxGa1-xP layer which is deposited on the surface of an n-type (or a p-type) GaP substrate; a superlattice-structured light-emitting layer which is composed of GaP and AlP and where only a GaP layer is doped selectively with atoms of N; a p-type (or an n-type) AlxGa1-xP layer. CONSTITUTION:An n-type AlxGa1-xP layer 2 and a superlattice-structured light- emitting layer 3 composed of GaP (N-doped) and AlP and a p-type AlxGa1-xP layer 4 are deposited in this sequence on an n-type GaP substrate 1; at the same time, electrodes 5, 6 are formed at each part on the surface of the p-type AlxGa1-xP layer 4 and on the surface of the n-type substrate 1; the electrode 5 is connected to the positive pole of a DC power source E via a variable resistor R and the electrode 6 is connected to the negative pole of the power source; the light of a purely green color is emitted when a prescribed voltage is applied to both electrodes 5, 6. If a p-type GaP substrate is used as a substrate, the p-type AlxGa1-xP layer, the superlattice-structured light-emitting layer composed of GaP (N-doped) and AlP and the n-type AlxGa1-xP layer are deposited in this sequence on the surface of this substrate. |
