| 摘要 |
PURPOSE:To form a region acting as a base by diffusion and to reduce the size of a pattern sharply by a method wherein an N-type base region and a P-type emitter region are formed on the surface of a collector region which completely reaches a collector buried layer from the surface of an epitaxial layer and a P-type collector contact region is formed so as to surround the base region. CONSTITUTION:Boron B to form a collector buried layer 25 and a lower-part diffused layer 33 is deposited on a buried layer 23 where antimony Sb is deposited on the surface of a semiconductor substrate 21. An epitaxial layer 22 is formed on the whole surface of the substrate 21 ions of boron B are implanted in order to form a collector region 26 on the surface corresponding to the collector buried layer 25; each region is driven in down to the depth in such a way that the collector region 26 completely reaches the collector buried layer 25. Ions of phosphorus P are implanted in order to form a base region 27 on the surface of the collector region 26; a P-type emitter region 28 and a collector contact region 29 are formed by diffusion; a base contact region 30 is formed on the surface of the base region 27; an electrode 32 is installed on each region.
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