| 摘要 |
PURPOSE:To make it possible to control the ion implantation accurately, by furnishing an electron flooding device to eliminate the charge of semiconductor substrates, at the position where no ion beam passes through other than a beam line. CONSTITUTION:An electron flooding device 10, that is, an electron gun 8 to generate the primary electrons and a target 9 to generate the secondary electrons, is arranged at the position where the ion beams don't pass through, other than a beam line 4, and the electron gun 8 and the target 9 are opposed to the sUbstrate loading surface of a disk 1 which is exposed outside the beam line 4. Consequently, the primary and the secondary electrons generated from the electron flooding device 10 have no possibility to run in a flag Faraday 6 used at the beam setup time or a disk Faraday 5 to measure the beam current passing through a slit 3 of the disk 1, and give no error to a dosage controller 7 to control the implanting amount. Therefore, an accurate ion implatation can be carried out with no error given to the dosage of the ion implantation.
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