| 摘要 |
PURPOSE:To increase film deposition rate with minimum laser powder and to form a film with uniform thickness, by providing two plane mirrors, facing each other in such a manner that a laser beam introduced into a reaction chamber reciprocates across and near a semiconductor wafer surface a number of times. CONSTITUTION:Laser beams 7 pass via a 90 deg. reflection mirror and enter a reaction chamber 1 from an incident window 3 and cross the inside of the reaction chamber and are reflected on an emission side plane mirror 11 disposed on an emission window 4 and go outside from the incident window 3 and are reflected on an incident side plane mirror 10 and enter the reaction chamber 1 from the incident window 3. The laser beams 7 gradually attenuate inside the reaction chamber 1 and reciprocate in plurality of times between two plane mirrors 10 and 11, and so the beam power becomes nearly zero. A plurality of striped thin films are deposited on a surface of a semiconductor wafer 2 where the laser beams pass, however, a movable stage slowly moves and the laser beams are scanned along the upper surface of the semiconductor, so that the striped thin films spread plainly to obtain uniform film formation.
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