| 摘要 |
PURPOSE:To prevent slip and dislocation from being introduced into a substrate and facilitate forming a thin uniform thermal oxide film which is necessary for manufacture of VLSI and the like and simplify a heat treatment process by providing a heat treatment control substrate with an aperture between the substrates. CONSTITUTION:A plurality of semiconductor wafers 3 which are subjected to a heat treatment such as diffusion are arranged in a boat 2 along the longitudinal direction of the boat 2. Dummy wafers 4 are placed between the semiconductor wafers 3. An aperture 6 is formed at the center part of the dummy wafer 4. The boat 2 in which the semiconductor wafers 3 and the dummy wafers 4 are alternately arranged is transferred into a reaction tube 1 and the temperature of the boat is quickly elevated from the room temperature to the diffusion temperature (A' D). Impurity gas and carrier gas are introduced from a gas supply inlet 5 and an ordinary diffusion process is carried out (D E). After the diffusion process is finished, the boat is drawn out of the reaction tube 1 and the temperature of the boat is made to descend from the diffusion temperature to the room temperature (E I').
|
