| 摘要 |
PURPOSE:To decrease the capacity of the region on one side of source and drain regions connected to a signal line, to lessen the capacity of the signal line and to improve significantly the signal levels of photosensors, which are read out on the signal line, by a method wherein this region is shared by the desired number of pieces of transistors. CONSTITUTION:Transistors Q1-Qn are divided into groups as one group with two pieces by two pieces and the groups respectively share one piece of a drain region 7. First, element isolation regions 9 are formed on a P-type region 8. Subsequently, n<+> regions 4 and an n<+> region 7, which are used as source and drain regions, are each formed using two pieces of gate electrodes 6 formed holding an oxide film 10 between them on the P-type region 8 as masks. Source electrodes 11 and a signal line 1 are respectively formed of such a metal as Al. Then, photosensor cells are arranged in a line form and each photosensor cell performs a storing operation to store the holes of electron-hole pairs generated by incident light in a p-type region 104 and a readout operation which can obtain a signal corresponded to the amount of incident light from an emitter electrode 108 and removes the stored holes through an emitter electrode 108 earthed. A refresh operation is repeated.
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